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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Preliminary Data Sheet
Integrated Power Stage for 230 VAC Motor Drives
Hybrid Power Module
These modules integrate a 3-phase inverter in a single convenient package. They are designed for 1.0 and 2.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user's control board. * Short Circuit Rated 10 s @ 125C * Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) * Compact Package Outline * Access to Positive and Negative DC Bus * UL Recognized
MHPM6B10A60D MHPM6B20A60D
Motorola Preferred Devices
10, 20 AMP, 600 V HYBRID POWER MODULES
PRELIMINARY
MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted)
Rating IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Peak Repetitive IGBT Collector Current (1) Continuous Diode Current Peak Repetitive Diode Current (1) IGBT Power Dissipation (TC = 25C) Diode Power Dissipation (TC = 25C) IGBT Power Dissipation (TC = 95C) Diode Power Dissipation (TC = 95C) Junction Temperature Range Short Circuit Duration (VCC = 300 V, TJ = 125C) Isolation Voltage Operating Case Temperature Range Storage Temperature Range Mounting Torque -- Heat Sink Mounting Holes (#8 or M4 screws) (1) 1.0 ms = 1.0% duty cycle
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol VCES VGES 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 ICmax IC(pk) IFmax IF(pk) PD PD PD PD TJ tsc VISO TC Tstg --
Value 600 20 10 20 20 40 10 20 20 40 52 78 19 38 23 34 8.3 17 - 40 to +150 10 2500 - 40 to +95 - 40 to +125 12
Unit V V A A A A W W W W C
msec
V C C in-lb
REV 2
(c) Motorola, Inc. 1997
MOTOROLA
MHPM6B10A60D MHPM6B20A60D 1
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) TJ = 125C Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) TJ = 125C Diode Forward Voltage (IF = IFmax, VGE = 0 V) TJ = 125C Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz) 10A60 20A60 Input Gate Charge (VCE = 300 V, IC = ICmax, VGE = 15 V) 10A60 20A60 Symbol IGES ICES VGE(th) V(BR)CES VCE(SAT) VF Cies -- -- QT -- -- 75 135 -- -- 2300 4400 -- -- nC Min -- -- 4.0 600 -- -- -- -- Typ -- 6.0 2000 6.0 -- 2.35 2.31 1.23 1.12 Max 20 100 8.0 -- 3.5 -- 2.0 -- Unit A A V V V V pF
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25C)
Recommended Gate Resistor Turn-On Turn-Off Turn-On Delay Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Rise Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Turn-Off Delay Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) Fall Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) Turn-On Energy (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Turn-Off Energy (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Diode Reverse Recovery Time (IF = IFmax, V = 300 V, RG as specified) Peak Reverse Recovery Current (IF = IFmax, V = 300 V, RG as specified) Diode Stored Charge (IF = IFmax, V = 300 V, RG as specified) 10A60 20A60 Qrr 10A60 20A60 -- -- 560 1060 -- -- 10A60 20A60 RG(on) RG(off) td(on) -- -- tr -- -- td(off) -- tf -- E(on) -- -- E(off) -- -- trr -- Irrm -- -- 6.8 12 -- -- 150 -- 0.13 0.3 1.0 2.0 0.85 1.6 1.0 2.0 210 500 219 -- 160 125 -- -- 375 215 -- -- -- -- -- 180 47 20 -- -- --
W
ns
ns
ns ns mJ
mJ
ns A
nC
MHPM6B10A60D MHPM6B20A60D 2
MOTOROLA
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125C)
Characteristic Turn-On Delay Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Rise Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Turn-Off Delay Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) Fall Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) Turn-On Energy (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Turn-Off Energy (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Diode Reverse Recovery Time (IF = IFmax, V = 300 V, RG as specified) Peak Reverse Recovery Current (IF = IFmax, V = 300 V, RG as specified) Diode Stored Charge (IF = IFmax, V = 300 V, RG as specified) 10A60 20A60 Qrr 10A60 20A60 -- -- 1330 2400 -- -- Symbol td(on) -- -- tr -- -- td(off) -- tf -- E(on) -- -- E(off) -- -- trr -- Irrm -- -- 10 18 -- -- nC 240 -- A 0.44 0.82 -- -- ns 1.2 2.2 -- -- mJ 460 -- mJ 230 -- ns 160 125 -- -- ns 335 200 -- -- ns Min Typ Max Unit ns
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance -- IGBT Thermal Resistance -- Free-Wheeling Diode 10A60 20A60 10A60 20A60 RqJC RqJC -- -- -- -- 1.94 1.28 5.28 2.61 2.43 1.60 6.60 3.26 C/W C/W
MOTOROLA
MHPM6B10A60D MHPM6B20A60D 3
TYPICAL CHARACTERISTICS
2.0 VGE = 18 V 1.5 IC /I Cmax 12 V IC /I Cmax 15 V 1.5 2.0 VGE = 18 V 15 V 12 V
1.0 9.0 V 0.5
1.0 9.0 V 0.5
0 0 1.0 2.0 3.0 VCE (V) 4.0 5.0 6.0
0 0 1.0 2.0 3.0 VCE (V) 4.0 5.0 6.0
Figure 1. Normalized IC versus VCE, TJ = 25C
Figure 2. Normalized IC versus VCE, TJ = 125C
2.5
800 700 toff @ 125C tf @ 125C 500 400 300 200 IF (NORMALIZED) 100 0 0 0.2 0.4 0.6 0.8 VF (V) 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 IC/ICmax 0.8 1.0 1.2 td tf td @ 125C toff
2.0 t d(off) , t f , t off (ns)
600
IF/I Fmax
1.5
1.0
IF (NORMALIZED), 125C
0.5 0
Figure 3. IF versus VF
Figure 4. td(off), tf, toff versus Normalized IC
1400 1200 1000 t d , t f , t off (ns) 800 600 toff 400 200 0 0 td 20 40 60 RG (W) 80 100 120 tf td @ 125C toff @ 125C tf @ 125C t d(on), t r , t on (ALL NORMALIZED ON t r )
10
ton @ 125C td(on) 1.0
ton
td(on) @ 125C tr tr @ 125C
0.1 0 0.2 0.4 0.6 IC/ICmax 0.8 1.0 1.2
Figure 5. td(off), tf, toff, versus RG
Figure 6. td(on), tr, ton versus IC
MHPM6B10A60D MHPM6B20A60D 4
MOTOROLA
TYPICAL CHARACTERISTICS
10 t d(on), t r , t on (ALL NORMALIZED ON t r ) ton td(on) E on , E off (mJ) tr 1.0 2.5 Eon @ 125C
2.0
1.5
Eon
1.0 Eoff @ 125C
@ 125C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RG/RG (RECOMMENDED)
0.5 0 0 5.0 10 IC, (A) 15 Eoff 20 25
Figure 7. td(on), tr, ton versus Normalized RG
Figure 8. Eon, Eoff versus IC
0.05 Eoff, 125C E on (NORMALIZED FOR E on WITH RECOMMENDED R G(on))
2.0
0.04
1.5
Eon, 125C Eon
Eoff (mJ/A)
0.03
1.0
0.02
Eoff
0.01
0.5
0 0 20 40 60 RG (W) 80 100 120
0 0 0.5 1.0 1.5 2.0 2.5 RG/RG (RECOMMENDED)
Figure 9. Eoff versus RG(off) at Rated IC
Figure 10. Normalized Eon versus Normalized RG(on)
1000 Cies 100 Cres 10
t rr , (NORMALIZED TO 1), I rr , (NORMALIZED TO 10)
Irr
1.0
trr
CAPACITANCE, NORMALIZED TO I Cmax (pF/A)
10
1.0
Coes
@ 125C 0.1 0 0.2 0.4 0.6 IF/IFmax 0.8 1.0 1.2
0.1 0 20 40 VCE (V) 60 80 100
Figure 11. trr, Irr versus IF
Figure 12. Capacitance Variation
MOTOROLA
MHPM6B10A60D MHPM6B20A60D 5
TYPICAL CHARACTERISTICS
15 VCC = 300 10A60 20A60 10 VGE (V) IC (A) 10 100 20A60 10A60
5.0
1.0
+VGE = 15 V -VGE = 0 V RG AS SPECIFIED RG(on) TJ = 25C 0 100 200 300 400 500 600 700
0 0 20 40 60 80 100 120 140 QG (nC)
0 VCE (V)
Figure 13. VGE versus QG
Figure 14. Reverse Biased Safe operating Area
1.0 20A60 DIODE
0.8 NORMALIZED r(t)
0.6
10A60 DIODE 10A60 IGBT 20A60 IGBT
0.4
0.2 0
0.01
0.1
1.0
10 TIME (ms)
100
1,000
10,000
Figure 15. Normalized Transient Thermal Resistance
+15 V RG(on) tf 90% RG(off) 90% INPUT, Vin 50% 10% PULSE WIDTH 50% MC33153
ton td(on) OUTPUT, Vout INVERTED 10% tr 90% td(off)
toff
Figure 16. Switching Waveforms
Figure 17. Typical Gate Drive Circuit
MHPM6B10A60D MHPM6B20A60D 6
MOTOROLA
APPLICATION INFORMATION
These modules are designed to be used as the power stage of a three-phase AC induction motor drive. They may be used for up to 230 VAC applications. Switching frequencies up to 10 kHz have been considered in the design. Gate resistance recommendations have been listed. Separate turn-on and turn-off resistors are listed, to be used in a circuit resembling Figure 17. All switching characteristics are given based on following these recommendations, but appropriate graphs are shown for operation with different gate resistance. In order to equalize across the two different module ratings, a normalization process was used. Actual typical values are listed in the second section of this specification sheet, "Electrical Specifications," but many of the graphs are given in normalized units. The first three graphs, the DC characteristics, are normalized for current. The devices are designed to operate the same at rated maximum current (10 and 20 A). The curves extend to I Cpk , the maximum allowable instantaneous current. The next graph, turn-off times versus current, is again normalized to the rated maximum current. The following graph, turn-off times versus RG(off), is intentionally not normalized, as both modules behave similarly during turn- off. Turn-on times have been normalized. Again, the graph showing variation due to current has been normalized for rated maximum current. The graph showing variation due to gate resistance normalizes against the recommended RG(on) for each module. In addition, the times are normalized to tr at the appropriate temperature. For example, td(on) for a 10 A module operating at 125C at 4.0 A can be found by multiplying the typical tr for a 10 A module at 125C (160 ns) by the value shown on the graph at a normalized current of 0.4 (1.6) to get 256 ns. The most salient features demonstrated by these graphs are the general trends: rise time is a larger fraction of total turn-on time at 125C, and in general, larger gate resistance results in slower switching. Graphs of switching energies follow a similar structure. The first of these graphs, showing variation due to current, is not normalized, as any of these devices operating within its limits follows the same trend. Eoff does not need to be normalized to show variation with R G(off) , as both are specified with the same nominal resistance. Eon, however, has been appropriately normalized. Gate resistance has been normalized to the specified RG(on). In order to show the effect of elevated temperature, all energies were normalized to Eon at 25C using the recommended RG(on). Reverse recovery characteristics are also normalized. IF is normalized to rated maximum current. Irrm is normalized so that at maximum current at either 25C or 125C, the graph indicates "10", while trr is normalized to be "1" at maximum current at either temperature. Capacitance values are normalized for ICmax. Due to poor scaling, gate charge and thermal characteristics are shown separately for each module. Many issues must be considered when doing PCB layout. Figure 19 shows the footprint of a module, allowing for reasonable tolerances. A polarizing post is provided near pin 1 to ensure that the module is properly inserted during final assembly. When laying out traces, two issues are of primary importance: current carrying capacity and voltage clearance. Many techniques may be used to maximize both, including using traces on both sides of the PCB to double total copper thickness, providing cut-outs in high-current traces near high-voltage pins, and even removing portions of the board to increase "over-the-surface" creapage distance. Some additional advantage may be gained by potting the entire board assembly in a good dielectric. Consult appropriate regulatory standards, such as UL 840, for more details on high-voltage creapage and clearance.
1
2
3
4
5
6
7
8
Q1
D1
Q3
D3
Q5
D5
Q2
D2
Q4
D4
Q6
D6
16
15
14
13
12
11
10
9
Figure 18. Schematic of Internal Circuit, Showing Package Pin-Out
MOTOROLA
MHPM6B10A60D MHPM6B20A60D 7
RECOMMENDED PCB LAYOUT VIEW OF BOARD FROM HEAT SINK (All Dimensions Typical) NON-PLATED THRU-HOLE 0.140 0.265 KEEP-OUT ZONES (x4) 0.270
0.175
0.250
0.625 0.270 PIN 1
PLATED THRU-HOLES (x16)
0.065 0.250 3.500
PACKAGE "SHADOW"
0.450
0.625
0.175
0.175
1.350 1.530
OPTIONAL NON-PLATED THRU-HOLES FOR ACCESS TO HEAT SINK MOUNTING SCREWS (x2)
Figure 19. Package Footprint
NOTES: 1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non-plated thru-hole in the footprint. 2. Dimension of plated thru-holes indicates finished hole size after plating. 3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.
MHPM6B10A60D MHPM6B20A60D 8
MOTOROLA
PACKAGE DIMENSIONS
3.500 3.000
0.154
1
2
3
4
5
6
7
8
0.115
16 15 14 13 12 11 10 9
1.000
1.530
1.350
0.250
0.050
0.150 0.475 0.650 0.350
PRELIMINARY
MOTOROLA
MHPM6B10A60D MHPM6B20A60D 9
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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MHPM6B10A60D MHPM6B20A60D 10
MHPM6B10A60D/D
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